1W Imitation Lumen 755-760-765-770-775-780-790NM High Power Infrared LED Light Emitting Diode
1W Imitation Lumen 755-760-765-770-775-780-790NM High Power Infrared LED Light Emitting Diode
1W Imitation Lumen 755-760-765-770-775-780-790NM High Power Infrared LED Light Emitting Diode
1W Imitation Lumen 755-760-765-770-775-780-790NM High Power Infrared LED Light Emitting Diode
1W Imitation Lumen 755-760-765-770-775-780-790NM High Power Infrared LED Light Emitting Diode

1W Imitation Lumen 755-760-765-770-775-780-790NM High Power Infrared LED Light Emitting Diode

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1W Imitation Lumen 755-760-765-770-775-780-790NM High Power Infrared LED Light Emitting Diode

About the product

Characteristic

Origin

Shenzhen

Product type

Power diode

Working current

350

Working voltage

1.9-2.4

Power

1

Item number

AL678714297040

Brand

Other

Overall dimensions

8

Model

XL001WP01NRC780

Number of pins

2

Bracket material

Copper

Whether to import

No

Thermal resistance

-

Order number

XL001WP01NRC780

Lighting angle

120

Luminous efficiency

-

Chip brand

Import

Luminous surface size

-

Color tolerance

-

96 hours accelerated aging

-

Maximum allowable junction temperature

-

Light intensity/luminous flux

-

Main wavelength/color temperature

-

Esd (human mode)

-

1000 hours of conventional aging

-

There are licensable private brands

Is

Operating temperature range

-20 to +75

Description


 

供应1W仿流明外观

755NM-760NM-765NM-770NM

775NM-780NM-785NM-790NM

大功率近红外灯珠LED

仿流明凸透镜











 

Absolute Maximum Rating                  (Ta=25)

Item

Symbol

Value

Unit

DC forward current

IF

350

mA

Pulse forward current

IFP

1000

mA

Power dissipation

PD

1050

mW

Operating temperature

Topr

-20~+75

Storage temperature

Ystg

-30~+80

Reversevoltage 

VR

5

V

Sold soldering temperature

Tsol

260℃/3Sec

---

Plus with Max 10ms,duty ratio max1/10

 

Initial Electrical/Optical Characteristics                                (Ta=25)

Item

Symbol

condition

Min

Type

Max

Unit

DC forward Voltage

VF

I=350mA

1.9

2.2

2.4

V

DC reverse Current

IR

V=5V

----

----

10

μA

Chromaticity coordinates*

λ

I=350mA

770

780

790

nm

Spectrum Radiation Bandwidth

Δλ

I=350mA

----

25

----

Nm

Luminous Intensity

IV(A)

I=350mA

10

 

15

LM

IV(B)

I=350mA

15

 

20

50%Power Angle

2θ1/2

I=350mA

----

120

----

deg

 

 

 

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Characters

Properties

Origin

Shenzhen

Product type

Power diode

Working current

350

Working voltage

1.9-2.4

Description


 

供应1W仿流明外观

755NM-760NM-765NM-770NM

775NM-780NM-785NM-790NM

大功率近红外灯珠LED

仿流明凸透镜











 

Absolute Maximum Rating                  (Ta=25)

Item

Symbol

Value

Unit

DC forward current

IF

350

mA

Pulse forward current

IFP

1000

mA

Power dissipation

PD

1050

mW

Operating temperature

Topr

-20~+75

Storage temperature

Ystg

-30~+80

Reversevoltage 

VR

5

V

Sold soldering temperature

Tsol

260℃/3Sec

---

Plus with Max 10ms,duty ratio max1/10

 

Initial Electrical/Optical Characteristics                                (Ta=25)

Item

Symbol

condition

Min

Type

Max

Unit

DC forward Voltage

VF

I=350mA

1.9

2.2

2.4

V

DC reverse Current

IR

V=5V

----

----

10

μA

Chromaticity coordinates*

λ

I=350mA

770

780

790

nm

Spectrum Radiation Bandwidth

Δλ

I=350mA

----

25

----

Nm

Luminous Intensity

IV(A)

I=350mA

10

 

15

LM

IV(B)

I=350mA

15

 

20

50%Power Angle

2θ1/2

I=350mA

----

120

----

deg

 

 

 

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