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LCR-TC1 Многофункциональный транзисторный МОП-тестер сопротивления емкости ESR полноцветный экранный дисплей

0.0

1232 ta sotildi

Eng kam miqdor: 1 dona

dan boshlab

263 316 so'm

263 316 so'm1 546 ta zaxirada mavjud

Sizning tanlovingiz

Siz hozircha hech narsani tanlamadingiz. Iltimos, mahsulotni tanlang.

Kafolatlangan yetkazib berish muddati

Agar biz 45 kun kechiksak, buyurtmani bepul olasiz. Batafsil

Har doim siz bilan aloqada

Biz har kuni savollarga har qanday savollarga javob beramiz.

To'lovni qulay usulda xavfsiz qiling

Biz to'lovlarni turli xil usullarda qabul qilamiz.

Bo'lib to'lash mavjud

maxsulotni tanlang

Buyurtmani rasmiylashtirish paytida muddatli to‘lovni tanlang. Muddatli to‘lovning yakuniy qiymati rasmiylashtirishda hisoblanadi.

Mahsulot haqida

Xususiyatlar

Tavsif

Component Type	Range	Parameter Description
BJT	-	hFE(DC Current Gain),Ube(Base-Emitter Voltage),Ic(Collector Current), Iceo(Collector Cut-off Current(IB=0)), Ices(Collector short Current), Uf(Forward Voltage of protecting diode)
diode	forward voltage <4.50V	Forward voltage drop, junction capacitance, reverse leakage current Ir
double diode	forward voltage <4.50V	forward voltage
Zener diode	0.01-4.50V (Transistor Test Area)	Forward voltage drop, reverse breakdown voltage
Zener diode	0.01-20V (Zener diode test area)	reverse breakdown voltage
MOSFET	JFET	Cg(Gate Capacitance), Id(Drain Current)at Vgs(Gate to Source Threshold Voltag),UfForw Voltage of protecting diode)
	IGBT	Drain current Id under Vgs, protection diode forward voltage drop Uf
	MOSFET	Turn-on voltage Vt, gate capacitance Cg, drain resistance Rds, protection diode forward voltage drop Uf
Thyristor	Gate trigger current <6mA	gate turn-on voltage
Triac	Gate trigger current <6mA	gate turn-on voltage
capacitor	25pF-100mF	Capacitance Value, Equivalent Series Resistance ESR, Vloss
Resistor	0.01-50MΩ	resistance
Inductor	0.01mH-20H	Inductance, DC Resistance
Battery	0.1-4.5V	Voltage value, battery polarity

主图+配件

Barcha xususiyatlar

Tavsif

Component Type	Range	Parameter Description
BJT	-	hFE(DC Current Gain),Ube(Base-Emitter Voltage),Ic(Collector Current), Iceo(Collector Cut-off Current(IB=0)), Ices(Collector short Current), Uf(Forward Voltage of protecting diode)
diode	forward voltage <4.50V	Forward voltage drop, junction capacitance, reverse leakage current Ir
double diode	forward voltage <4.50V	forward voltage
Zener diode	0.01-4.50V (Transistor Test Area)	Forward voltage drop, reverse breakdown voltage
Zener diode	0.01-20V (Zener diode test area)	reverse breakdown voltage
MOSFET	JFET	Cg(Gate Capacitance), Id(Drain Current)at Vgs(Gate to Source Threshold Voltag),UfForw Voltage of protecting diode)
	IGBT	Drain current Id under Vgs, protection diode forward voltage drop Uf
	MOSFET	Turn-on voltage Vt, gate capacitance Cg, drain resistance Rds, protection diode forward voltage drop Uf
Thyristor	Gate trigger current <6mA	gate turn-on voltage
Triac	Gate trigger current <6mA	gate turn-on voltage
capacitor	25pF-100mF	Capacitance Value, Equivalent Series Resistance ESR, Vloss
Resistor	0.01-50MΩ	resistance
Inductor	0.01mH-20H	Inductance, DC Resistance
Battery	0.1-4.5V	Voltage value, battery polarity

主图+配件

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